Wavelength modification of AlxGa1−xAs quantum well heterostructure lasers by layer interdiffusion
- 1 October 1983
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (10) , 5637-5641
- https://doi.org/10.1063/1.331825
Abstract
Data are presented showing that thermal annealing (875–-900 °C) can be used to modify the wavelength of a photopumped, low threshold AlxGa1−xAs quantum well heterostructure (QWH) laser from ∼8200 to ∼7300 Å with a threshold change from 150 to 1700 W/cm2. The energy levels of the annealed single quantum well crystal are approximated by fitting a modified Pöschl–Teller potential to the band-edge profile as modified by layer (Al–Ga) interdiffusion. The layer (Al–Ga) interdiffusion coefficient (at 875 °C) is found to be smaller, by a factor of 3–4, than previously reported. We suggest that this is due to the high quality, i.e., low defect density, of the ultralow threshold QWH crystals of this work.This publication has 8 references indexed in Scilit:
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