Large Area Doping Technique Using an Ion Source of rf Discharge with Magnetic Field
- 1 July 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (7A) , L1355
- https://doi.org/10.1143/jjap.27.l1355
Abstract
A low energy broad ion beam doping technique has been developed. This technique enables the doping of impurities into semiconductor materials over a large area (370 mm φ) without mass separation and beam scanning. Diborane diluted in hydrogen was discharged by rf (13.56 MHz) power and magnetic fields. Ions from discharged gas were accelerated by an acceleration voltage of 1.5 kV and were implanted into silicon wafers. We confirmed that resistance uniformity in five pieces of 3in.-Si wafers simultaneously doped by this technique was ±3.44 percent.Keywords
This publication has 3 references indexed in Scilit:
- Formation of source and drain regions for a-Si:H thin-film transistors by low-energy ion doping techniqueIEEE Electron Device Letters, 1988
- Phosphorus doping for hydrogenated amorphous silicon films by a low-energy ion doping techniqueApplied Physics Letters, 1987
- Glow-discharge-implanted, thermally annealed, oxide-passivated silicon solar cells of 19% efficiencyApplied Physics Letters, 1987