The current understanding of epitaxial CVD silicon doping in the light of modelling and theory development (III). The law of epitaxial layer doping and its limitation
- 1 June 1987
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 22 (6) , 767-776
- https://doi.org/10.1002/crat.2170220604
Abstract
No abstract availableKeywords
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