Infrared radiation annealing for extended-defect reduction in As-implanted Si crystals

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Abstract
Infrared radiation annealing (IRA) has been used to remarkably reduce extended defects in As-implanted Si. In the present work, As+ was implanted into a 76-mm-diam (111) Si wafer at a 5×1015/cm2 dose and 25-keV energy. The sample had a Si outer ring and was uniformly heated by means of IR at 1340 °C for 10 min in a dry-O2 ambient; about 0.05 μm of the Si was oxidized. In the epitaxial layer on the annealed sample, the etch-pit density was lower than 102/cm2. Contrarily, the etch-pit density rose above 108/cm2 when the implantation energy was increased, annealing temperature decreased, or the oxidation thickness decreased. The IRA described here is effective in annealing high-dose samples, such as in applications involving buried collectors in n-p-n transistors.