Ranges in Si and lighter mono and multi-element targets
- 31 July 1995
- journal article
- review article
- Published by Elsevier in Materials Science and Engineering: R: Reports
- Vol. 15 (1-2) , 1-83
- https://doi.org/10.1016/0927-796x(94)00176-6
Abstract
No abstract availableKeywords
This publication has 100 references indexed in Scilit:
- Energy loss, range, path length, time-of-flight, straggling, multiple scattering, and nuclear interaction probabilityAtomic Data and Nuclear Data Tables, 1982
- Description of arsenic and boron profiles implanted in SiO2, Si3N4 and Si using Pearson distributions with four momentsNuclear Instruments and Methods, 1981
- Stopping power values of Be, C, Al and Si for 4He ionsNuclear Instruments and Methods, 1980
- Z1 oscillations in low energy heavy ion rangesNuclear Instruments and Methods, 1980
- A Monte Carlo computer program for the transport of energetic ions in amorphous targetsNuclear Instruments and Methods, 1980
- Range parameters of protons in silicon implanted at energies from 0.5 to 300 keVNuclear Instruments and Methods, 1980
- The use of neutron induced reactions for light element profiling and lattice localizationNuclear Instruments and Methods, 1978
- Profiling hydrogen in materials using ion beamsNuclear Instruments and Methods, 1978
- Stopping cross sections and backscattering factors for 4He ions in matter Z = 1–92, E(4He) = 400–4000 keVAtomic Data and Nuclear Data Tables, 1974
- Range and stopping-power tables for heavy ionsAtomic Data and Nuclear Data Tables, 1970