The effects of strain on morphology and structural properties of InGaAs/InP(001) grown by molecular beam epitaxy
- 1 April 1990
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 67 (7) , 3378-3381
- https://doi.org/10.1063/1.345381
Abstract
A series of InxGa1−x As films with different compositions around x=0.53 were grown on InP(001) substrates by molecular beam epitaxy. These layers were studied by double crystal x‐ray diffraction and secondary electron microscopy. It was found that the broadening of a layer Bragg peak is an indication of a large scale lattice relaxation in the highly strained heterolayer. In the less strained layers the peak widths are due to sample curvature and compositional grading. The morphologies of the strained layers suggested that the sign of strain is an important factor affecting the growth kinetics on the surface. In particular, an increasing tensile strain in the epitaxial layer tends to decrease the migration rate of the species on the growing surface.This publication has 15 references indexed in Scilit:
- Long-lived InGaAs quantum well lasersApplied Physics Letters, 1989
- Low-loss multiple quantum well GaInAs/InP optical waveguidesApplied Physics Letters, 1989
- Investigation of the interface grading in III-V heterostructures by double-crystal diffractometryJournal of Applied Physics, 1989
- Strained-layer Ga1−xInxAs/InP avalanche photodetectorsApplied Physics Letters, 1988
- Controversy of critical layer thickness for InGaAs/GaAs strained-layer epitaxyApplied Physics Letters, 1988
- Reflection high-energy electron diffraction intensity oscillation study of InGaAs and InAlAs on InP: Application to pseudomorphic heterostructuresApplied Physics Letters, 1987
- X-ray double-crystal characterization of highly perfect InGaAs/InP grown by vapor-phase epitaxyJournal of Applied Physics, 1986
- The interpretation of X-ray rocking curves from III–V semiconductor device structuresJournal of Crystal Growth, 1984
- Molecular-beam epitaxial growth of uniform Ga0.47In0.53As with a rotating sample holderApplied Physics Letters, 1981
- A Dynamical Theory of Diffraction for a Distorted CrystalJournal of the Physics Society Japan, 1969