Backgating reduction in MESFETs using an AlAsnative oxide buffer layer
- 21 November 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (24) , 2271-2273
- https://doi.org/10.1049/el:19961529
Abstract
The authors present a new approach to the reduction of the backgating effect in GaAs MESFETs. A thin 1200 Å layer of the native oxide AlxOy is used in the buffer layer directly below the conducting channel and increases the backgating threshold to –17 V, while retaining excellent device characteristics.Keywords
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