Quality of ZnSe/GaAs epilayers studied by spatial correlation model of Raman scattering
- 31 May 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (22) , 2845-2847
- https://doi.org/10.1063/1.109229
Abstract
In this letter, the spatial correlation model has been used for interpreting the line shapes of the first-order longitudinal-optical phonon Raman spectra of ZnSe/GaAs epitaxial layers. The good agreement between theoretical line shapes and the experiment measurements was illustrated for the samples grown by the molecular beam epitaxy (MBE), hot wall epitaxy (HWE), and hot wall beam epitaxy (HWBE).Keywords
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