Raman study of disorder and strain in epitaxial ZnSxSe1−x films on a GaAs substrate
- 16 March 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (11) , 1330-1332
- https://doi.org/10.1063/1.107333
Abstract
Quantitative characterization of disorder and strain in ZnSxSe1−x/GaAs lattice‐mismatched semiconductor heterostructures was successfully done by means of Raman spectroscopy. The alloy disorder and the phonon coherence length in epitaxial ZnSxSe1−x films were estimated from the Raman linewidth of the ZnSe‐like LO phonon by using a spatial correlation model. The strain due to the lattice mismatch near the interface between ZnSxSe1−x and GaAs was deduced from the linewidth of the GaAs LO phonon.Keywords
This publication has 10 references indexed in Scilit:
- The one phonon Raman spectrum in microcrystalline siliconPublished by Elsevier ,2002
- Biaxial splitting of optical phonon modes in ZnSe-ZnS strained-layer superlatticesApplied Physics Letters, 1991
- Raman Scattering in ZnSxSe1-x AlloysJapanese Journal of Applied Physics, 1991
- Phonon study of strained InGaAs layersApplied Physics Letters, 1991
- Microstrain and macrostrain profiles in ZnSe epitaxial layersApplied Physics Letters, 1990
- Optical vibrational modes of ZnSe-strained-layer superlatticesPhysical Review B, 1988
- Raman study of an epitaxial GaAs layer on a Si [100] substrateApplied Physics Letters, 1987
- Raman study of polish-induced surface strain in 〈100〉 GaAs and InPApplied Physics Letters, 1984
- Raman Scattering in Alloy Semiconductors: "Spatial Correlation" ModelPhysical Review Letters, 1984
- Optical Phonons inMixed CrystalsPhysical Review Letters, 1967