Phonon study of strained InGaAs layers
- 28 January 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (4) , 400-402
- https://doi.org/10.1063/1.104647
Abstract
Relaxation of strain in InxGa1−xAs layers on GaAs is studied by Raman spectroscopy for layers below and above the critical thickness. We show that the enormous strain of the perfect epitaxial layer is released stepwise with the thickness. It is suggested that dislocations formed at the layer surface impose the growth of the next sublayer of partially released strain, preserving the former grown sublayer of higher strain.Keywords
This publication has 12 references indexed in Scilit:
- Microstrain and macrostrain profiles in ZnSe epitaxial layersApplied Physics Letters, 1990
- Strain mapping in [111] and [001] InGaAs/GaAs superlatticesApplied Physics Letters, 1990
- Critical Thickness for the Si1-xGex/Si HeterostructureJapanese Journal of Applied Physics, 1990
- Critical thickness for pseudomorphic growth of Si/Ge alloys and superlatticesJournal of Applied Physics, 1988
- Determination of the critical layer thickness of Si1−xGex/Si heterostructures by direct observation of misfit dislocationsApplied Physics Letters, 1988
- Generation of misfit dislocations in semiconductorsJournal of Applied Physics, 1987
- Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained-layer heterostructuresApplied Physics Letters, 1985
- Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eVPhysical Review B, 1983
- Depth profiling and interface analysis using spectroscopic ellipsometryJournal of Vacuum Science and Technology, 1982
- Defects in epitaxial multilayersJournal of Crystal Growth, 1974