Critical Thickness for the Si1-xGex/Si Heterostructure
- 1 January 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (1A) , L20
- https://doi.org/10.1143/jjap.29.l20
Abstract
An energy balance theory for predicting the critical thickness of the Si1-x Ge x /Si heterostructure is derived based on an experimentally identified dislocation generation mechanism. The theory is in close agreement with experimental results. The critical thickness predicted by this theory is about four times that by the mechanical balance theory of Matthews and Blakeslee.Keywords
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