Band-to-band Auger recombination in silicon based on a tunneling technique. II. Experiment
- 1 June 1983
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (6) , 3456-3463
- https://doi.org/10.1063/1.332409
Abstract
Using a new method based on hot‐electron generation, band‐to‐band Auger recombination in n+ silicon is studied experimentally. Using the theory developed in Part I, a conservative analysis demonstrates that this Auger recombination is limited to an electron Auger coefficient smaller than 5×10−32 cm6/sec which is in disagreement with some earlier studies reporting Cn =2.8×10−31 cm6/sec.This publication has 16 references indexed in Scilit:
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