Impurity displacement by vacancy trapping in gold-implanted iron single crystals at low dose
- 15 June 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 33 (12) , 8829-8832
- https://doi.org/10.1103/physrevb.33.8829
Abstract
The substitutional fraction () of Au atoms implanted into Fe single crystals at room temperature increases with increasing dose from for 0.1 at.% Au to for Au concentrations exceeding 1 at.%. This concentration dependence of is attributed to the formation of Au-vacancy complexes. The number of the complexes decreases with increasing Au concentration due to complex dissolution accompanied by the formation of an increasing number of competing vacancy-trapping centers.
Keywords
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