Defect engineering as an important factor in developing VLSI substrates
- 28 February 1983
- journal article
- Published by Elsevier in Physica B+C
- Vol. 116 (1-3) , 162-167
- https://doi.org/10.1016/0378-4363(83)90243-7
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Origin and control of material defects in silicon VLSI technologies: An overviewIEEE Transactions on Electron Devices, 1982
- On the out-diffusion of oxygen from siliconPhysica Status Solidi (a), 1981
- Oxygen and carbon in Czochralski-grown siliconMicroelectronics Journal, 1981
- Zum Nachweis von Sauerstoff in Mikrobereichen von versetzungsfreien Czochralski‐Silizium‐EinkristallenCrystal Research and Technology, 1977