5 GHz, 12 mW NMOS frequency divider
- 7 July 1988
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 24 (14) , 834-835
- https://doi.org/10.1049/el:19880567
Abstract
We report on the development of an NMOS 2:1 frequency divider circuit that operates to over 5 GHz. It is powered from a 2.5 V supply and dissipates only 0.012 W. These results indicate that the use of silicon MOS technology may be extended to very-high-speed low-power applications.Keywords
This publication has 2 references indexed in Scilit:
- A 3GHz 12-channel time-division multiplexer-demultiplexer chip setPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1986
- A submicron NMOS technology suitable for low power high speed circuitsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1985