Optically detected far-infrared resonances in doped GaAs quantum wells
- 15 September 1995
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 52 (12) , R8654-R8657
- https://doi.org/10.1103/physrevb.52.r8654
Abstract
We have observed a variety of far-infrared resonances, including the transition from the ground state to the first excited state in neutral donors, and singlet and triplet transitions of negative donor ions (), as well as electron-cyclotron resonance, in well-center-doped GaAs quantum wells, employing a recently developed optical detection technique. The power of this technique for studying impurity states in confined systems is clearly revealed. Results provide evidence for the existence of centers under optical excitation in multiple-quantum-well structures doped only in the wells.
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