Correlation between reliability of thermal oxides and dislocations in n-type 4H-SiC epitaxial wafers
- 10 July 2006
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 89 (2) , 022909
- https://doi.org/10.1063/1.2221525
Abstract
The correlation between thermal oxide reliability and dislocations in n -type 4 H - Si C (0001) epitaxial wafers has been investigated. The thermal oxides were grown by dry oxidation at 1200 ° C followed by nitrogen postoxidation annealing. Charge-to-breakdown values of thermal oxides decrease with an increase in the number of the dislocations in a gate-oxide-forming area. Two types of dielectric breakdown modes, edge breakdown and dislocation-related breakdown, were confirmed by Nomarski microscopy. In addition, it is revealed that basal plane dislocation is the most common cause of the dislocation-related breakdown mode.Keywords
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