MESFET MMIC Ka-band transmitter performance for high volume system applications
- 9 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 153-156
- https://doi.org/10.1109/gaas.1991.172658
Abstract
A monolithic transmitter consisting of a voltage controlled oscillator and power amplifier has been successfully demonstrated for Ka-band high volume system applications (smart munitions) using nominally quarter micron MESFET technology. The results show that this technology is able to deliver good performance without compromising on yield and cost in Ka-band. With improvement in 1/f noise in HEMTs (high electron mobility transistors), it will be a viable candidate for VCOs in the future. Also shown is a unified design approach for VCOs and power amplifiers using small signal analysis.<>Keywords
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