Apid Thermal Oxidation of Silicon: Aspects of the Initial Regime Kinetics
- 1 January 1990
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Steam Oxidation of SiliconJournal of the Electrochemical Society, 1989
- Kinetics of Rapid Thermal OxidationJournal of the Electrochemical Society, 1989
- Thermionic emission model for the initial regime of silicon oxidationApplied Physics Letters, 1987
- Parallel Oxidation Mechanism for Si Oxidation in Dry O 2Journal of the Electrochemical Society, 1987
- In-Situ Processing of Silicon Dielectrics by Rapid Thermal Processing: Cleaning, Growth, and AnnealingMRS Proceedings, 1987
- Thermal Oxidation of Silicon in Dry Oxygen: Accurate Determination of the Kinetic Rate ConstantsJournal of the Electrochemical Society, 1985
- Temperature Measurement and Control in a Rapid Thermal ProcessorMRS Proceedings, 1985