Hydrogenation effect in an n-channel metal-oxide-semiconductor field-effect transistor
- 14 January 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (2) , 134-136
- https://doi.org/10.1063/1.104951
Abstract
The effects of hydrogen plasma exposure on the characteristics of an n‐channel metal‐oxide‐semiconductor field‐effect transitor are studied. The helium plasma gives almost no changes in maximum transonductance and subthreshold slope whereas the hydrogen plasma degrades maximum transconductance and increases subthreshold slope. These results indicate that the excess interface traps are generated by hydrogenation, which is also confirmed by quasi‐static capacitance‐voltage analysis.Keywords
This publication has 10 references indexed in Scilit:
- Role of hydrogen complexes in the metastability of hydrogenated amorphous siliconPhysical Review B, 1990
- Hydrogen bonding and diffusion in crystalline siliconPhysical Review B, 1989
- Diatomic-Hydrogen-Complex Diffusion and Self-Trapping in Crystalline SiliconPhysical Review Letters, 1989
- Kinetics of passivation of centers at the (111) Si- interfacePhysical Review B, 1988
- Diffusion of radiolytic molecular hydrogen as a mechanism for the post-irradiation buildup of interface states in SiO2-on-Si structuresJournal of Applied Physics, 1985
- Effect of final annealing on hot-electron-induced MOSFET degradationIEEE Electron Device Letters, 1985
- Relationship between MOSFET degradation and hot-electron-induced interface-state generationIEEE Electron Device Letters, 1984
- Low-temperature annealing and hydrogenation of defects at the Si–SiO2 interfaceJournal of Vacuum Science and Technology, 1981
- The Current Understanding of Charges in the Thermally Oxidized Silicon StructureJournal of the Electrochemical Society, 1974
- Defect Structure and Irradiation Behavior of Noncrystalline SiO2IEEE Transactions on Nuclear Science, 1971