Three dimensional devices fabricated by silicon epitaxial lateral overgrowth
- 1 October 1990
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 19 (10) , 1111-1117
- https://doi.org/10.1007/bf02651990
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- A new epitaxial lateral overgrowth silicon bipolar transistorIEEE Electron Device Letters, 1987
- Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performanceIEEE Electron Device Letters, 1987
- 1/4-µm CMOS isolation technique using selective epitaxyIEEE Transactions on Electron Devices, 1987
- Role of oxygen in defect-related breakdown in thin SiO2 films on Si (100)Journal of Applied Physics, 1987
- Defect formation in thermal SiO2 by high-temperature annealingApplied Physics Letters, 1986
- Low Temperature Silicon Epitaxy by Hot Wall Ultrahigh Vacuum/Low Pressure Chemical Vapor Deposition Techniques: Surface OptimizationJournal of the Electrochemical Society, 1986
- Epitaxial Lateral Overgrowth of Silicon over Steps of Thick SiO2Journal of the Electrochemical Society, 1986
- Silicon epitaxy at 650–800 °C using low-pressure chemical vapor deposition both with and without plasma enhancementJournal of Applied Physics, 1985
- Characteristics and three-dimensional integration of MOSFET's in small-grain LPCVD polycrystalline SiliconIEEE Transactions on Electron Devices, 1985
- Calculated threshold-voltage characteristics of an XMOS transistor having an additional bottom gateSolid-State Electronics, 1984