Early voltage in very-narrow-base bipolar transistors
- 1 February 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 11 (2) , 88-89
- https://doi.org/10.1109/55.46937
Abstract
It is shown that for VLSI devices with very narrow base widths (less than 0.1 mu m), the velocity saturation effect gives a substantial increase in Early voltage and a corresponding beneficial increase in output resistance. The theory is discussed, and practical results are presented.Keywords
This publication has 4 references indexed in Scilit:
- Analytic results for the base region of bipolar transistors based on computer simulationsSolid-State Electronics, 1987
- IC-VCE characteristics of double diffused bipolar transistors under low level injectionSolid-State Electronics, 1980
- Low current base-collector boundary conditions in GHz frequency transistorsSolid-State Electronics, 1975
- Effects of Space-Charge Layer Widening in Junction TransistorsProceedings of the IRE, 1952