Fully integrated nonlinear modeling and characterization system of microwave transistors with on-wafer pulsed measurements
- 19 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 1033-1036 vol.3
- https://doi.org/10.1109/mwsym.1995.406148
Abstract
A novel approach for nonlinear characterization and modeling of microwave transistors has been developed. The whole process is organized as a set of methods contained in the transistor database. This implies that characterization and modeling are performed in an integrated manner. I(V) and S-parameters are measured on wafer under pulsed conditions, suitable for MESFETs, HEMTs or HBTs as illustrated by the proposed models.Keywords
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