Liquid phase epitaxial growth of (Al,Ga)As double-heterostructure laser material in a sapphire boat
- 1 December 1982
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (12) , 9217-9219
- https://doi.org/10.1063/1.330395
Abstract
It is demonstrated that the use of a sapphire boat in the liquid phase epitaxial (LPE) growth of (Al,Ga)As double heterostructure (DH) laser material results in better layer-thickness uniformity and no edge growth. We attribute this improvement to control of thermal geometry within the melt. In addition, the wetting of Ga on sapphire results in laser material which has less prominent meniscus lines and is free of rake lines. The distribution of cw threshold currents represents a substantial improvement for LPE grown (Al,Ga)As and is comparable to that reported for MBE (Al,Ga)As DH lasers.This publication has 10 references indexed in Scilit:
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