Variation in the diode quality factor for metal-insulator-n-semiconductor solar cells
- 31 December 1982
- journal article
- Published by Elsevier in Solar Cells
- Vol. 7 (3) , 219-223
- https://doi.org/10.1016/0379-6787(82)90047-3
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- The change in short-circuit current density with insulator layer thickness in MIS solar cellsSolar Cells, 1981
- A comparison of majority- and minority-carrier silicon MIS solar cellsIEEE Transactions on Electron Devices, 1980
- Effects of minority-carrier storage at the interface states on the fill factor of m.i.s. solar cellsIEE Journal on Solidstate and Electron Devices, 1979
- Photovoltaic properties of MIS-Schottky barriersSolid-State Electronics, 1977
- Model calculations for metal-insulator-semiconductor solar cellsSolid-State Electronics, 1977
- MIS-Schottky theory under conditions of optical carrier generation in solar cellsApplied Physics Letters, 1976