Model calculations for metal-insulator-semiconductor solar cells
- 30 September 1977
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 20 (9) , 741-751
- https://doi.org/10.1016/0038-1101(77)90002-8
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- MIS-Schottky theory under conditions of optical carrier generation in solar cellsApplied Physics Letters, 1976
- Barrier height enhancement in p-silicon MIS solar cellsIEEE Transactions on Electron Devices, 1976
- Effects of interfacial oxide layers on the performance of silicon Schottky-barrier solar cellsApplied Physics Letters, 1976
- A 15% efficient antireflection-coated metal-oxide-semiconductor solar cellApplied Physics Letters, 1975
- Minority carrier MIS tunnel diodes and their application to electron- and photo-voltaic energy conversion—I. TheorySolid-State Electronics, 1974
- Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodesJournal of Physics D: Applied Physics, 1971