Hydrogen depth profiles in ion implanted magnetic bubble garnets

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Abstract
The hydrogen depth profiles of ion implanted magnetic bubble garnet films have been measured by elastic recoil analysis using 44 MeV chlorine ions. The garnets were triply implanted with Ne, N, and H and were then annealed with or without a surface coating of SiO2. At 250 °C, H was found to diffuse throughout the damaged surface layer but not into the underlying undamaged material. At 350 °C, H diffused out of the uncoated garnet, but was sealed into the implant damaged layer by the thin oxide coating. The deposition of the oxide layer at low temperature after implantation but before processing resulted in a constant H concentration profile extending throughout the implant damaged region of the bubble garnet. This retention of hydrogen correlates with previously reported improvements in propagation behavior of oxide coated ion implanted bubble devices.