In situ characterization techniques for monitoring and control of VPE growth of Hg1-xCdxTe
- 1 June 1993
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 8 (6S) , 860-871
- https://doi.org/10.1088/0268-1242/8/6s/007
Abstract
No abstract availableKeywords
This publication has 38 references indexed in Scilit:
- Real time control of the molecular-beam epitaxial growth of CdHgTe and CdTe/HgTe superlattices using ellipsometryJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Selected-area epitaxy of CdTeJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- In situ optical monitoring of OMVPE deposition of AlGaAs by laser reflectanceJournal of Electronic Materials, 1991
- In situ monitoring of crystal growth by reflectance difference spectroscopyJournal of Crystal Growth, 1991
- Infinite-melt vertical liquid-phase epitaxy of HgCdTe from Hg solution: Status and prospectsJournal of Crystal Growth, 1988
- In situ characterization of MOCVD growth processes by light scattering techniquesJournal of Crystal Growth, 1986
- The determination of mbe growth mechanisms using dynamic rheed techniquesSurface Science, 1986
- Liquid Phase Epitaxy of Hg1−xCdxTe from Te Solutions: A Route to IR Detector StructuresMRS Proceedings, 1986
- Characterization of CdxHg1-xTe p-type layers grown by MBEJournal of Crystal Growth, 1982
- The growth by MOVPE and characterisation of CdxHg1−xTeJournal of Crystal Growth, 1981