In situ optical monitoring of OMVPE deposition of AlGaAs by laser reflectance
- 1 December 1991
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 20 (12) , 1099-1104
- https://doi.org/10.1007/bf03030215
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Epitaxial growth rate measurements during molecular beam epitaxyJournal of Vacuum Science & Technology B, 1990
- In Situ Optical Monitoring of the GaAs Growth Process in MOCVDJapanese Journal of Applied Physics, 1990
- In situ measurement of the metalorganic and hydride partial pressures in a MOCVD reactor using ultraviolet absorption spectroscopyJournal of Crystal Growth, 1989
- Reflectance-difference studies of organometallic chemical-vapor-deposition growth transients on (001) GaAsJournal of Crystal Growth, 1989
- A study of the OMVPE growth mechanisms using internal reflectance spectroscopy to examine adsorption of TMGa and NH3 and surface reactions between themJournal of Electronic Materials, 1989
- Ultraviolet absorption spectra of metalorganic molecules diluted in hydrogen gasJournal of Crystal Growth, 1988
- CARS in situ diagnostics in MOVPE: The thermal decomposition of AsH3 and PH3Journal of Crystal Growth, 1988
- In situ characterization of MOCVD growth processes by light scattering techniquesJournal of Crystal Growth, 1986
- Raman investigations of reaction process in MOVPEJournal of Crystal Growth, 1986
- In situ, real-time diagnostics of OMVPE using IR-diode laser spectroscopyJournal of Crystal Growth, 1986