Band offset determination from conduction band filling in InGaAs/GaAs quantum wells
- 30 September 1991
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 79 (11) , 889-892
- https://doi.org/10.1016/0038-1098(91)90437-z
Abstract
No abstract availableThis publication has 22 references indexed in Scilit:
- Oscillatory photoluminescence excitation in InGaAs/GaAs strained-layer quantum well structuresSemiconductor Science and Technology, 1991
- Energy storage in quantum-well lasersOptics Letters, 1990
- Energy levels of strainedAs-GaAs superlatticesPhysical Review B, 1990
- Photocurrent spectroscopy of strained-layer InGaAsGaAs multiple quantum wellsSurface Science, 1990
- Excitonic transitions in strained-layerAs/GaAs quantum wellsPhysical Review B, 1989
- Photocurrent spectroscopy of InxGa1−xAs/GaAs multiple quantum wellsApplied Physics Letters, 1989
- Concentration-dependent band offset instrained quantum wellsPhysical Review B, 1988
- Hot-carrier energy-loss rates in GaAs/As quantum wellsPhysical Review B, 1988
- Photoluminescence and photoconductivity measurements on band-edge offsets in strained molecular-beam-epitaxy-grown As/GaAs quantum wellsPhysical Review B, 1988
- Large valence-band offset in strained-layer-GaAs quantum wellsPhysical Review B, 1987