Silicon-doping level dependent diffusion of Be in AlGaAs/GaAs quantum well lasers

This publication has 27 references indexed in Scilit:

• Fermi-level-pinning-induced impurity redistribution in semiconductors during epitaxial growth
  Physical Review B, 1990
• Suppression of Beryllium Diffusion by Incorporating Indium in AlGaAs for HBT Applications using Molecular Beam Epitaxy
  Japanese Journal of Applied Physics, 1990
• Control of Be diffusion in molecular beam epitaxy GaAs
  Applied Physics Letters, 1985
• Mechanisms of atomic diffusion in the III-V semiconductors
  Journal of Physics D: Applied Physics, 1985
• Summary Abstract: Effects of high levels of Be in GaAs by MBE
  Journal of Vacuum Science & Technology B, 1985
• Reduced threshold current temperature dependence in double heterostructure lasers due to separate p-n and heterojunctions
  IEEE Journal of Quantum Electronics, 1983
• Alteration of diffusion profiles in semiconductors due to p−n junctions
  Solid-State Electronics, 1982
• Photoluminescence study of acceptors in AlxGa1−xAs
  Journal of Applied Physics, 1982
• A Note on the Theory of Diffusion of Copper in Germanium
  Proceedings of the Physical Society, 1959
• Mechanism of Diffusion of Copper in Germanium
  Physical Review B, 1956