Alteration of diffusion profiles in semiconductors due to p−n junctions
- 31 December 1982
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 25 (12) , 1171-1177
- https://doi.org/10.1016/0038-1101(82)90076-4
Abstract
No abstract availableKeywords
This publication has 23 references indexed in Scilit:
- LPE growth of Cd-doped InPJournal of Crystal Growth, 1981
- Control of Zn Doping for Growth of InP pn Junction by Liquid Phase EpitaxyJournal of the Electrochemical Society, 1980
- Reproducible diffusion of beryllium into GaAs during liquid phase epitaxial growthApplied Physics Letters, 1980
- Mg-doped InGaAsP/InP l.e.d.s for high-bit-rate optical-communication systemsElectronics Letters, 1979
- Atomic diffusion in semiconductorsReports on Progress in Physics, 1978
- The effect of the internal electric field on ionized impurity diffusion in semiconductorsBritish Journal of Applied Physics, 1966
- Simultaneous diffusion of oppositely charged impurities in semiconductorsSolid-State Electronics, 1966
- Diffusion of charged particles into a semiconductor under consideration of the built-in fieldSolid-State Electronics, 1961
- Diffusion of Boron into SiliconJournal of Applied Physics, 1960
- An Analysis of Diffusion in SemiconductorsIBM Journal of Research and Development, 1957