Fine structure of near-band-edge photoluminescence in He+-irradiated GaN grown on SiC
- 1 June 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (22) , 2838-2840
- https://doi.org/10.1063/1.121474
Abstract
The effect of He ion implantation on the optical properties of epitaxial GaN-on-SiC was studied. We observed that He+ irradiation increases the relative intensity of the “blue emission” and resistivity of GaN films and decreases the intensity of the near-band-edge photoluminescence. Because the intensity of the main peak is drastically decreased, the fine structure of the near-band-edge photoluminescence in GaN after He+ irradiation was observed. From a comparison of observed sharp lines with photoluminescence peaks of GaN doped with oxygen, we conclude that oxygen can produce a complex, which is characterized by a strong localization of free carriers and a large lattice distortion. The zero-phonon line of this defect has energy close to the band-gap energy of GaN.Keywords
This publication has 9 references indexed in Scilit:
- Electronic and structural properties of GaN grown by hydride vapor phase epitaxyApplied Physics Letters, 1996
- Activation of acceptors in Mg-doped GaN grown by metalorganic chemical vapor depositionApplied Physics Letters, 1996
- Photoluminescence, Reflectance, and Magnetospectroscopy of Shallow Excitons in GaNMRS Proceedings, 1996
- Dynamics of a band-edge transition in GaN grown by molecular beam epitaxyApplied Physics Letters, 1995
- Theory of Point Defects and Complexes in GaNMRS Proceedings, 1995
- Growth via Mocvd and Characterization Of GaN and AlxGa1−xN(0001) Alloys for Optoelectronic and Microelectronic Device ApplicationsMRS Proceedings, 1995
- Fine Structure of the 3.42 eV Emission Band in GaNMRS Proceedings, 1995
- The influence of oxygen on the electrical and optical properties of GaN crystals grown by metalorganic vapor phase epitaxyJournal of Applied Physics, 1992
- THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaNApplied Physics Letters, 1969