Static silicon frequency divider for low power consumption (4 mW, 10 GHz) and high-speed (160 mW, 19 GHz)

This publication has 8 references indexed in Scilit:

• A 34.8 GHz 1/4 static frequency divider using AlGaAs/GaAs HBTs
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
• A 22 Gb/s decision circuit and a 32 Gb/s regenerating demultiplexer IC fabricated in silicon bipolar technology
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
• A 3 mW 1.0 GHz silicon ECL dual-modulus prescaler IC
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
• A Si-bipolar 23 Gbit/s multiplexer and a 15 GHz 2:1 static frequency divider
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• A Si bipolar 21-GHz/320-mW static frequency divider
  IEEE Journal of Solid-State Circuits, 1991
• Suitability of present silicon bipolar IC technologies for optical fibre transmission rates around and above 10 Gbit/s
  IEE Proceedings G Circuits, Devices and Systems, 1990
• GaAs prescalers and counters for fast-settling frequency synthesizers
  IEEE Journal of Solid-State Circuits, 1990
• High-speed bipolar logic circuits with low power consumption for LSI-a comparison
  IEEE Journal of Solid-State Circuits, 1982