A Si bipolar 21-GHz/320-mW static frequency divider
- 1 January 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 26 (11) , 1626-1631
- https://doi.org/10.1109/4.98982
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Super self-aligned process technology (SST) and its applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A Si bipolar 21-GHz/320-mW static frequency dividerIEEE Journal of Solid-State Circuits, 1991
- 10.7 GHz frequency divider using double layer silicon bipolar process technologyElectronics Letters, 1988
- A 48ps ECL in a self-aligned bipolar technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987
- 3.8 Gbit/s bipolar master/slave D-flip-flop IC as a basic element for high-speed optical communication systemsElectronics Letters, 1986
- A 9-GHz frequency divider using Si bipolar super self-aligned process technologyIEEE Electron Device Letters, 1985
- Prospects of SST technology for high speed LSIPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1985
- Gigabit logic bipolar technology: advanced super self-aligned process technologyElectronics Letters, 1983