Low energy ion mixing in Si-Ge multilayer system
- 1 March 1994
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 85 (1) , 383-387
- https://doi.org/10.1016/0168-583x(94)95849-1
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Atomistic picture of interfacial mixing in the Si/Ge heterostructuresSurface Science, 1992
- Improved depth resolution of AES in‐depth profilingSurface and Interface Analysis, 1992
- Influence of ion mixing, ion beam‐induced roughness and temperature on the depth resolution of sputter depth profiling of metallic bilayer interfacesSurface and Interface Analysis, 1990
- Thermodynamic and fractal geometric aspects of ion-solid interactionsMaterials Science Reports, 1990
- Depth resolution improvements using specimen rotation during depth profilingSurface and Interface Analysis, 1989
- Computer simulations of sputteringNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Three-dimensional distributions of ion range and damage including recoil transportNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Improved depth resolution by sample rotation during Auger electron spectroscopy depth profilingThin Solid Films, 1985
- Metastable alloy formationJournal of Vacuum Science and Technology, 1978