Band offsets in SiSi1−xGex and GeSi1−xGex strained heterojunctions
- 1 July 1988
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 67 (4) , 445-447
- https://doi.org/10.1016/0038-1098(88)91063-0
Abstract
No abstract availableKeywords
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