Direct observation of interface effects of thin AlAs(100) layers buried in GaAs
- 7 September 2000
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 166 (1-4) , 309-312
- https://doi.org/10.1016/s0169-4332(00)00468-2
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Theoretical investigation of the thickness dependence of soft-x-ray emission from thin AlAs(100) layers buried in GaAsPhysical Review B, 2000
- Bulk and interface Alcore excitons in GaAs/AlAs/GaAs heterostructuresPhysical Review B, 1999
- Ab initiocalculations of soft-x-ray emission from Si(100) layers buried in GaAsPhysical Review B, 1998
- Theoretical investigation of soft x-ray emission from a Si(100) layer buried in GaAsVacuum, 1998
- Electronic structure of buried Si layers in GaAs(001) as studied by soft-x-ray emissionPhysical Review B, 1995
- Performance of a high resolution, high flux density SGM undulator beamline at the ALS (invited)Review of Scientific Instruments, 1995
- Soft x-ray emission spectroscopy using monochromatized synchrotron radiation (invited)Review of Scientific Instruments, 1989
- Design of a portable large spectral range grazing incidence instrumentNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1986
- Low-energy x-ray interaction coefficients: Photoabsorption, scattering, and reflectionAtomic Data and Nuclear Data Tables, 1982