Minority carrier lifetime in indium-doped HgCdTe(211)B epitaxial layers grown by molecular beam epitaxy
- 1 May 1995
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 24 (5) , 545-549
- https://doi.org/10.1007/bf02657961
Abstract
No abstract availableKeywords
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