An investigation of microcrystalline films produced by a dc glow discharge in silane and hydrogen
- 1 July 1982
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 11 (4) , 749-760
- https://doi.org/10.1007/bf02672393
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- The role of hydrogen in heavily doped amorphous siliconPhilosophical Magazine Part B, 1982
- Microcrystalline structure in glow-discharge-produced silicon filmsApplied Physics Letters, 1981
- Nucleation of Microcrystallites in Phosphorus-Doped Si:H FilmsJapanese Journal of Applied Physics, 1981
- Properties of polycrystalline silicon prepared by chemical transport in hydrogen plasma at temperatures between 80 and 400 degrees CJournal of Physics C: Solid State Physics, 1981
- Electrical and Structural Properties of Phosphorous-Doped Glow-Discharge Si:F:H and Si:H FilmsJapanese Journal of Applied Physics, 1980
- Properties of heavily doped GDSi with low resistivityJournal of Non-Crystalline Solids, 1979