The photoeffect in silicon planar positional photon-detectors with a high resistivity doped channel
- 1 December 1977
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 20 (12) , 999-1001
- https://doi.org/10.1016/0038-1101(77)90210-6
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Hall effect study of p-type high resistivity layers on n-type silicon substratesSolid-State Electronics, 1976
- An analysis of the radiation tracking transducerIRE Transactions on Electron Devices, 1962
- A New Semiconductor Photocell Using Lateral PhotoeffectProceedings of the IRE, 1957