Low-temperature properties and phototransport in silicon-on-insulator films synthesized by oxygen implantation
- 1 May 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 63 (9) , 4575-4579
- https://doi.org/10.1063/1.340158
Abstract
Silicon-on-insulator material formed by oxygen implantation (SIMOX) is analyzed by comparing conductivity and Hall-effect measurements performed at low temperature, under darkness, illumination, and substrate biasing. The quality of SIMOX films annealed at high temperatures above 1300 °C is found to be greatly enhanced in comparison with that obtained after conventional annealing at 1150–1200 °C. The analysis is fulfilled by discussing the carrier mobility and lifetime behavior, impurity ionization, doping compensation, film contamination, and scattering mechanisms. Hopping conduction is found to prevail below 60 K.This publication has 13 references indexed in Scilit:
- Silicon-on-insulator material formed by oxygen implantation and high-temperature annealing: Carrier transport, oxygen activity, and interface propertiesJournal of Applied Physics, 1987
- Depth profiles of the optical properties of buried oxides (SIMOX) by ellipsometryThin Solid Films, 1987
- Profiling of inhomogeneous carrier transport properties with the influence of temperature in silicon-on-insulator films formed by oxygen implantationJournal of Applied Physics, 1986
- High-speed, low-power, implanted-buried-oxide CMOS circuitsIEEE Electron Device Letters, 1986
- Comparison of buried oxide in silicon by oxygen implantation made by wafer and beam scanningApplied Physics Letters, 1986
- Optimization of oxygen-implanted silicon substrates for CMOS devices by electrical characterizationIEEE Transactions on Electron Devices, 1986
- Formation of buried insulating layers by high dose oxygen implantation under controlled temperature conditionsVacuum, 1985
- The effects of different implantation and annealing temperatures on the structural and chemical properties of high dose oxygen-ion-implanted siliconThin Solid Films, 1985
- Temperature dependence of Hall mobility and electrical conductivity in SIMOX filmsElectronics Letters, 1984
- Oxygen distributions in synthesized SiO2 layers formed by high dose O+ implantation into siliconVacuum, 1984