Growth of Epitaxial SrBi2Ta2O9 Thin Films by Metalorganic Chemical Vapor Deposition
- 1 April 2000
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 39 (4S) , 2102
- https://doi.org/10.1143/jjap.39.2102
Abstract
Epitaxially grown SrBi2Ta2O9(SBT) thin films were deposited on various types of substrates at temperatures ranging from 620 to 910°C by metalorganic chemical vapor deposition. Epitaxial SBT films with (001) orientation were easily grown on perovskite- and rocksalt-structured substrates. The films tended to grow at lower deposition temperatures on the substrates, which had a lower mismatch with the film. When the film was deposited on a fluorite-structured substrate, yttria-stabilized zirconia (YSZ), it had a fluorite phase at a wide deposition temperature range. Epitaxially grown SBT film with (116) orientation was prepared on (110) SrTiO3 substrate at 820°C. This film exhibited twinning.Keywords
This publication has 16 references indexed in Scilit:
- Effect of Deposition Temperature and Composition on the Microstructure and Electrical Property of SrBi2Ta2O9 Thin Films Prepared by Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1999
- Preparation of Bi-layered ferroelectric thin film by thernal MOCVDFerroelectrics, 1999
- CVD of SrBi2Ta2O9(SBT) Thin Film from Bi(CH3)3 - Sr[Ta(O·C2H5)6]2 - O2 SystemKey Engineering Materials, 1999
- Orientation Control of SrBi2Ta2O9 Epitaxial Thin Films and their PropertiesKey Engineering Materials, 1999
- Metalorganic Chemical Vapor Deposition of Epitaxial SrBi2Ta2O9 Thin Films and Their Crystal StructureJapanese Journal of Applied Physics, 1999
- Nonferroelectric epitaxial Sr–Bi–Ta oxide thin film with a high dielectric constantApplied Physics Letters, 1998
- Preferred Orientation, Phase Formation and the Electrical Properties of Pulsed Laser Deposited SrBi2Ta2O9 Thin FilmsJapanese Journal of Applied Physics, 1998
- Formation of SrBi2Ta2O9: Part II. Evidence of a bismuth-deficient pyrochlore phaseJournal of Materials Research, 1996
- Formation of Bi-based Layered Perovskite Oxide Films by a Laser Ablation TechniqueJapanese Journal of Applied Physics, 1995
- Preparation and Properties of ferroelectric Bi2SrTa2O9 thin films for FeRAM using Flash-MOCVDMRS Proceedings, 1995