Properties of SiOxNy films deposited by LPCVD from SiH4/N2O/NH3 gaseous mixture
- 1 April 1999
- journal article
- Published by Elsevier in Sensors and Actuators A: Physical
- Vol. 74 (1-3) , 52-55
- https://doi.org/10.1016/s0924-4247(98)00344-6
Abstract
No abstract availableKeywords
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