Static and nonequilibrium transient conductance at strong carrier freeze-out in a buried channel, metal-oxide-semiconductor transistor
- 15 July 1984
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 56 (2) , 511-516
- https://doi.org/10.1063/1.333939
Abstract
A simple model of the low temperature (T<30 °K), static and nonequilibrium transient conductance of the potential minimum region in a silicon, buried channel, metal-oxide-semiconductor field effect transistor is developed and experimental measurements of these conductances under carrier freeze-out conditions are presented. The transient, nonequilibrium conductance is considered as a potential mechanism for low voltage (∼25 mV), low switching energy (∼10 aJ), high density dynamic logic.This publication has 15 references indexed in Scilit:
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