Correlated Proton and Heavy Ion Upset Measurements on IDT Static RAMs
- 1 January 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 32 (6) , 4150-4154
- https://doi.org/10.1109/tns.1985.4334084
Abstract
Upset measurements on four types of CMOS/NMOS RAMs by IDT have been performed using both protons and heavy ions.Keywords
This publication has 3 references indexed in Scilit:
- The Total Dose Dependence of the Single Event Upset Sensitivity of IDT Static RAMsIEEE Transactions on Nuclear Science, 1984
- Heavy Ion-Induced Single Event Upsets of Microcircuits; A Summary of the Aerospace Corporation Test DataIEEE Transactions on Nuclear Science, 1984
- Proton Upsets in OrbitIEEE Transactions on Nuclear Science, 1983