Y-Ba-Cu-O Film Growth by OMCVD Using N2O

Publisher Website
Google Scholar
Abstract
By using N2O gas as an oxygen source, Y-Ba-Cu-O films prepared at the growth temperature of 650°C on the SrTiO3(100) substrate showed zero resistance at 79 K, while by using O2 gas, a growth temperature of 800°C was required to obtain the same film quality. The deposition rate of Y-Ba-Cu-O films on MgO(100) substrates by using N2O gas was nearly one half of that using O2 gas. The deposition rate monotonically increased with increasing of the growth temperature from 600°C to 800°C. The electrical quality of films prepared on the substrate became poorer in the series of SrTiO3(100), MgO(100) and Si(100) substrates. X-ray diffraction patterns of Y-Ba-Cu-O films grown on SrTiO3(100) and MgO(100) substrates indicate c-axis orientation, but those of films on Si(100) substrates did not indicate c-axis orientation.