Solid phase epitaxial regrowth of ion-implanted amorphized InP
- 11 August 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (6) , 316-318
- https://doi.org/10.1063/1.97154
Abstract
Solid phase epitaxial regrowth of implanted amorphous InP layers is shown to occur in the temperature range 230–330 °C. It leads to defective monocrystalline layers. The kinetics of growth follow an activation law with activation energy Ea=1.55 eV±0.2 eV. Roughening of the amorphous/crystalline interface occurs during growth. The dependence of interface roughening on crystal orientation is studied. In all cases, it is shown that the interface is degraded much faster than in GaAs. The comparison between the two compound semiconductors is based on chemical disorder in the amorphized layer.Keywords
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