Mechanisms of Epitaxial Growth of Polar Semiconductors on (001) Silicon
- 1 January 1989
- book chapter
- Published by Springer Nature in Springer Proceedings in Physics
Abstract
No abstract availableKeywords
This publication has 32 references indexed in Scilit:
- Heteroepitaxy on (001) Silicon: Growth Mechanisms and Defect Formation.MRS Proceedings, 1988
- Growth and Characterization of Cubic SiC Single‐Crystal Films on SiJournal of the Electrochemical Society, 1987
- Mechanisms of epitaxial growthContemporary Physics, 1987
- Lattice Defects in β-Sic Grown Epitaxially On Silicon SubstratesMRS Proceedings, 1987
- MOCVD growth and characterization of GaP on SiJournal of Crystal Growth, 1986
- Growth of GaAs on Si by MOVCDJournal of Crystal Growth, 1984
- Production of large-area single-crystal wafers of cubic SiC for semiconductor devicesApplied Physics Letters, 1983
- Crystal Interfaces. Part II. Finite OvergrowthsJournal of Applied Physics, 1963
- The observation of dislocations to accommodate the misfit between crystals with different lattice parametersPhilosophical Magazine, 1961
- One-dimensional dislocations. I. Static theoryProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1949