MOCVD growth and characterization of GaP on Si
- 1 September 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 77 (1-3) , 515-523
- https://doi.org/10.1016/0022-0248(86)90346-5
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Electrical and optical properties of GaP grown on Si by MOVPEJournal of Crystal Growth, 1984
- Growth of GaAs on Si by MOVCDJournal of Crystal Growth, 1984
- Molecular beam epitaxial growth of GaP on SiJournal of Applied Physics, 1984
- The growth of a GaP epilayer on Si substrates by metallorganic CVDJournal of Physics D: Applied Physics, 1982
- Heteroepitaxial Growth of GaP on Silicon by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1978
- The heteroepitaxial growth of GaP films on Si substratesJournal of Crystal Growth, 1977